半导体激光器(将此文翻译成英文）（将此文翻译成英文）

Also known as laser diode laser diode (LD). Into the 1980s, it absorbed the physical development of the semiconductor up-to-date results, the use of quantum well (QW) and strained quantum well (SL-QW) structures, such as novelty, the introduction of the refractive index modulation Bragg launchers, as well as to enhance Bragg modulation transmitter The latest technology, as well as the development of the MBE, MOCVD and the CBE, such as crystal growth technology of the new technology, making new epitaxial growth technology to precisely control crystal growth to the accuracy of atomic layer thick, high-quality growth of quantum wells, as well as strained quantum well materials. As a result, production of the LD, the current threshold of a significant decline in conversion efficiency has been greatly improved the power output doubled, significantly longer service life.

A low-power LD

In the field of information technology for the rapid development of low-power LD. For example, for fiber-optic communications and optical switching systems distributed feedback (DFB) and the dynamic single-mode LD, narrow linewidth tunable DFB-LD, such as CD-ROM for information processing technology in the field of visible light Wavelength (such as wavelength of 670nm, 650nm, 630nm The blue-green to red) LD, surface-emitting quantum well, as well as ultra-short laser pulses substantive, which are all treated the development of LD. The development of these devices are: narrow-linewidth single-frequency, high-speed, as well as short-wavelength tunable optical and integrated single-chip, and so on.

B high-power LD

In 1983, a single wavelength of 800nm output power LD more than 100mW, to 1989, 0.1mm-wide LD be reached 3.7W continuous output, and 1cm linear array LD has reached 76W output, the conversion efficiency of 39%. In 1992, the Americans also targets to a new level: 1cm linear array LD CW output power up to 121W, the conversion efficiency of 45%. Now, the output power of 120W, 1500W, 3kW and many other high-power LD have been published. High-efficiency, high power LD array and its rapid development for all-solid-state laser, diode laser that is pumped (LDP) of the rapid development of solid-state laser provides strong.

In recent years, in order to adapt to the EDFA and the EDFL, and other needs of the wavelength of 980nm high-power LD is that there is great development. Fiber Bragg Grating with recently selected frequency for filtering, a significant improvement in the stability of its output, pump effectively improve the efficiency.

And the characteristics of the application: semiconductor diode laser is the most important practical for a class of lasers. Its small size, long life, and a simple injection of current-pumped his way to work with the voltage and current circuit-compatible, which can be integrated with a single. And also can be as high as GHz frequency modulation direct current for high-speed modulation of laser output. As a result of these advantages, the semiconductor diode laser in the laser communications, optical storage, optical gyros, laser printing, as well as radar range, and so on, as well as access to a wide range of applications.

它们的结构简单说就是三明治的夹心结构，中间的夹心是有源区。

二者的结构上是相似的，但是LED没有谐振腔，LD有谐振腔。

LD工作原理是基于受激辐射、LED是基于自发辐射。

LD发射功率较高、光谱较窄、直接调制带宽较宽，而LED发射功率较小、光谱较宽、直接调制

带宽较窄。

激光器的工作存在与普通光源不同之处在于，它同时需要激光工作物质（这在半导体激光二极管LD中，激光工作物质即为半导体材料），泵浦（即外加的能量源），谐振腔。

LD和LED的工作时，其体系结构中都存在半导体工作物质和泵浦源，唯一不同的是，LD在其外层通过自然解理形成一重谐振腔，该谐振腔有一定的发光门限条件（即阈值条件）当达到这个条件是，激光器才开始粒子数反转受激发光。当LD的驱动还没达到阈值条件时，它的发光机理其实和LED是没有明显区别的。

1）两者都是光源，区别在于发光的功率不同。

2)

辐照角度，或者说色散角度不同，决定了使用时是否需要加透镜准直；也意味着光源照射物体的远近区别。

3)

安全性：LED不需要注意太多，除非是紫外的；LD需要注意使用安全，强光会伤害眼睛

4）成本价格：相差很大

5）长期使用可靠性：都是半导体器件，比较可靠；如果LED的光学组件老化不是很快，那么差别不大

6）电源：大电流恒流驱动与小电流恒压驱动

7）光谱：都是线光谱，LED的线宽宽些

8）响应速率：如果都是GaAs的材料，响应速率差别不大，波形上升沿调制相差不大（我个人观点，未实际测量过）

9）发光功率衰退，这两种器件都有，所以，一般考虑的是老化后使用时的功率

10）应用方面，个人感觉是民用和仪器使用方面的差别，要求重复性好，可靠性高，就用LD。

其它的，我也暂时想不到了，呵呵。

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