半导体泵浦固体激光器的波长

典型波长：635 nm，650 nm，660 nm，670 nm，690 nm，780 nm，830 nm，860 nm，915 nm，940 nm及1064 nm，1310 nm，1480 nm，808 nm,532 nm. 在工业激光设备中应用最多的波长的半导体激光器是。1064 nm,532 nm,808 nm等波长段的。

光纤激光器的泵浦源，常见的是带尾纤的半导体激光器直接通过光纤耦合器耦合进光纤。

目前，主要用半导体激光器作为泵浦源。掺铒光纤激光器主要用980nm或者1480nmLD作为泵浦源，掺镱光纤激光器主要用915nm或者976nmLD作为泵浦源。

利用光纤耦合更换泵浦激光器既可以现场更换，又能快速复位，无需再校准，方便用户 *** 作。

扩展资料：

半导体泵浦激光器的优点：

1、结构体积小，结构紧凑，整体性强，密封性能好，一般具有防震、防震的特点，工作稳定， *** 作简单，维修方便，成本低。采用适当的工艺，还可以耐高温、耐寒、耐水。半导体泵浦激光器在许多场合（如航空、航天、航天、船舶、工业场所等）都有重要的应用。

2、总转化率高，加热最小，热响应小。这将提高激光输出光束的质量和输出稳定性。

3、由于半导体激光器寿命长，转换率高，整个系统的寿命长（至少15000~20000小时），在许多实际应用中具有重要的优势。

The first semiconductor lasers into practical, the lasing wavelength 0.83到0.85 um. This corresponds to the fiber loss spectrum of a window, multi-mode optical fiber loss of 2 dB / km. Centered on improving the capacity of optical fiber communication systems, in the 1970s-period. 1.3 um wavelength in the loss was smaller (0.4 dB/km3, close to zero coefficient of dispersion single mode optical fiber. Soon after to develop further reduce the wear and tear 1. 55um single-mode optical fiber

Window. Back in the late 1960s began to study the long-wavelength (1.3 ym) InGaAsP / InP laser also with single-mode optical fiber into the development of practical systems. 1.55 uPm lasing wavelength of the laser diode was quick to practical use. To further to achieve the low threshold lasers, good dynamic single-frequency, high temperature and the characteristics of the work of the long-term stability, and have a lot of different structures, high-performance semiconductor lasers, such as the hidden bar buried heterojunction (BH ) Laser, distributed feedback (DFH) laser, sub-Bubu Bragg reflector (DBR) laser, cleavage coupled lasers and quantum well lasers, and so on.

Visible development of the momentum from semiconductor laser discs, optical-times the income copying and processing technology development. As early as 1974 the Netherlands, Philips Research experimental laser-start digital audio recording (DAD) Study. Okazaki in the record store data on the number of inverse laser beam focus will be on the spot diameter and the diameter is proportional to the wavelength of the laser. Therefore, in order to improve access to the information DAD density, to use the laser wavelength as short as possible sources. The first is the use of the He-Ne laser, but because of their size greenhouses limited life, the 1982 listing of the CD (CompactDisk) jukebox on a wavelength of 780 nm semiconductor laser. In recent years. A shorter wavelength such as the 30 nm semiconductor lasers have become commodities. Small size, low price and long life in the semiconductor laser optical information storage and processing has been the largest market. shan of laser research to promote a high-power laser diode (including the array of lasers) development. For there were iron-doped solid medium, such as Nd: YAG, NdYVO, such as the wavelength of 808 nm-effective around the peaks, with small size, lasing wavelength of 808 nm semiconductor laser instead of the usual-pumped solid-state laser materials, Can be small in size, Su Pu high efficiency (up to 70%) for dim light of the solid.

With REE-doped fiber amplifier, used as the source of pumping high-power laser diode was also another important application. For example, using wavelength of 980 nm or 1480 nm, for the tens of milliwatts of power semiconductor laser pump fiber, can get high-gain coefficient, so that optical signals are more than 30 dB gain. Fiber amplifier in the optical fiber communication has been critical applications.

In short, the need for a variety of applications, semiconductor laser beam is to improve the quality of development, reducing the beam divergence angle to enhance the coherence of space, increasing the high-speed modulation of the so-called dynamic single-modelpressure narrow spectral line width to improve beam The time coherencefurther enhance the stability of temperature (that is, high temperature on the strength of the levy), the application of the laser diode is continuously expanding.

5, the band works so that semiconductor lasers generate a new leap forward with the molecular beam epitaxy (MBE) and metal organic compounds chemical vapor deposition (MOCVD) technology development and improvement, can grow to atomic size of the order of ultra-thin layer, which can Formation of the carrier into a holding it is the nature of quantum wells and superlattices. This is a band semiconductor and massive (often referred to as material) Semiconductor completely different shape and structure, and can, if necessary, by changing variables should be ultra-thin layer of the band structure change. The so-called "band project" or "band cutting project" to semiconductor laser with a new vitality, its device performance a big leap. For example, the quantum well semiconductor laser output power for up to tens of wattstemperatures as high as several characteristics of Baidulaser threshold current of less than 1 mAmultiple quantum modulation doped laser relaxation oscillation frequency of up to 30 GHz, as usual Double-heterojunction semiconductor laser five times in the high-speed modulation than the width of the semiconductor laser is usually a low number

Order of magnitude, and so on. As quantum well (especially strained quantum well) structure emerges, the visible light laser diode increase the life span, the lasing wavelength further shortened. Have proven that the band works to fundamentally change the face of the semiconductor laser. In the near future, its continuous power output may reach several hundred watts and watts in order to enable it is not only a technical school in the field of information, but also in material processing, and to play an important role.

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